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Asen Asenov (FIEEE, FRSE) received his MSc degree in solid state physics from Sofia University, Bulgaria in 1979 and his PhD degree in physics from the Bulgarian Academy of Science in 1989. He has ten years of industrial experience as the head of the Process Device Modelling Group at the Institute of Microelectronics in Sofia, where he developed integrated process device CMOS simulators IMPEDANCE. Between 1989 and 1991, he served as a Visiting Professor in the Physics Department at the Technical University of Munich, Germany. Asenov joined the Department of Electronics and Electrical Engineering at the University of Glasgow in 1991 and served as Head of the Department from 1999 to 2003. Currently, he is the James Watt Professor of Electrical Engineering and leads the Glasgow Device Modelling Group, directing the development of 2D and 3D quantum mechanical, Monte Carlo, and classical device simulators for the design of advanced novel CMOS devices. Asenov is recognized for pioneering simulations of statistical variability in nano-CMOS devices, focusing on random dopants, interface roughness, and line edge roughness. He has authored over 550 publications and has given more than 160 invited talks in various areas.