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Dr. Asif Islam Khan’s group conceptualizes and fabricates solid-state electronic devices that leverage interesting physics and novel phenomena emerging from materials such as ferroelectrics, antiferroelectrics, and strongly correlated/quantum materials. His research aims to overcome fundamental limits in computation and address pressing challenges within the semiconductor industry and computing paradigms. Dr. Khan has led experimental proof-of-concept demonstrations of negative capacitance—a new physical phenomenon that facilitates ultra-low power computing memory platforms—thereby overcoming the fundamental 'Boltzmann Limit' associated with 60 mV/decade subthreshold swing in field-effect transistors. He received his Ph.D. in Electrical Engineering and Computer Sciences from the University of California, Berkeley in 2015 and earned his B.S. degree in Electrical and Electronic Engineering from the Bangladesh University of Engineering and Technology (BUET) in 2007. He joined the School of Electrical and Computer Engineering at the Georgia Institute of Technology as a tenure-track assistant professor in Spring 2017.
Department of Computer Science: GRE scores are optional for Fall 2026.