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Ching-Lien Hsiao is an Associate Professor at Linköping University, specializing in the development of electronic-grade nitride semiconductor thin films and complex nanostructures. He obtained his PhD in physics from National Sun Yat-Sen University in Taiwan in 2004, where his research focused on the growth of GaN nanorods using plasma-assisted molecular-beam epitaxy. Following his doctoral studies, he undertook a four-year postdoctoral fellowship at the Center for Condensed Matter Sciences at National Taiwan University, where he developed nonpolar InN using PAMBE and received an outstanding postdoc fellowship grant from the National Science Council. In 2009, he joined Linköping University, advancing from postdoc to assistant professor and senior lecturer, where he has continued his pioneering research in nanotechnology. His work includes the growth of group III-nitride semiconductors such as AlN, GaN, and InN, focusing on their applications in magnetron sputter epitaxy for future industrial production. He has published over 70 scientific papers and has secured funding from various agencies including the Swedish Research Council and the Swedish Energy Agency.
Linköping University • Linköping, Sweden
Focus on the development of electronic-grade group III-nitride semiconductors and their applications.
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