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Fred Allen is a Professor Emeritus of Electrical and Computer Engineering at the University of California, Los Angeles. He has made significant contributions to the fields of surface properties, particularly in angle-resolved photoemission studies of freshly cleaved silicon surfaces under ultra-high vacuum conditions. His research has also focused on dopant behavior in silicon, which is crucial for semiconductor technology. Additionally, he has expertise in Molecular Beam Epitaxy (MBE) growth techniques, which are essential for the development of advanced materials used in electronic and optoelectronic devices.
Department of Economics admits primarily for the PhD program.