Dr. Saibal Mukhopadhyay

Biography

Saibal Mukhopadhyay received a Bachelor of Engineering degree in Electronics and Telecommunication Engineering from Jadavpur University, Calcutta, India, in 2000, and a Ph.D. degree in Electrical Computer Engineering from Purdue University, West Lafayette, in August 2006. He joined the faculty of the Georgia Institute of Technology in September 2007 and was appointed to the Joseph M. Pettit Professorship in 2018. Mukhopadhyay worked at IBM T. J. Watson Research Center in Yorktown Heights, N.Y., as a research staff member from August 2006 to September 2007, and had internships during the summers of 2003, 2004, and 2005. His research primarily focused on technology-circuit co-design methodologies, low-power variation tolerant static random access memory (SRAM), and sub-65nm silicon technologies. He has (co)-authored over 250 papers at reputed conferences and journals and has filed four United States patents. He is a Fellow of IEEE. His research interests include low-power, variation tolerant, reliable VLSI systems, device/circuit level modeling and estimation of power, yield, and reliability, technology-circuit co-design methodologies, self-adaptive systems, on-chip sensing and repair techniques, memory design, VLSI applications, and ultra-low power fault-tolerant nanoelectronics across technology, circuit, and computing platforms.

Research Interests

Experience

Awards