Dr. Vanya Darakchieva

Biography

Vanya Darakchieva works on the development of novel semiconductor materials for high-frequency power electronics. Her research focuses on developing spectroscopic techniques for studying the electronic transport properties of materials, both at the bulk and nanoscale levels. She specializes in ultra-wide bandgap semiconductors, particularly β-Ga2O3 and AlN, and their applications in high-power electronic devices that offer significant efficiency improvements, such as in electric power generation, power transmission, and electric vehicles. Current research efforts include the development of MOVPE and PLD remote epitaxy techniques for β-Ga2O3 and AlN. She aims to deepen the understanding of defect structures and free charge carriers in these materials and optimize them for various applications in quantum technology. Her work also covers advanced methods in terahertz ellipsometry and magneto-ellipsometry for analyzing electronic, transport, and magnetic properties of semiconductors, nanomaterials, and organic materials. Her research is intertwined with applications in wireless communication and sensing technologies, focusing on minimizing defect densities in device structures.

Research Interests