Dr. William Doolittle

Professor

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Biography

Professor Doolittle, a native of Jonesboro, Georgia, graduated with a bachelor's degree in electrical engineering with highest honors in 1989 from Georgia Tech. He received his Ph.D. in electrical engineering in 1996 from Georgia Tech, where his thesis work involved identifying device limiting defects in photovoltaic silicon materials using custom-designed patented tools. Since joining the Georgia Tech faculty in 2001, he has played a significant role in developing academic programs in microelectronic fabrication, materials growth, characterization, and measurement system design. His research focuses on wide bandgap semiconductor materials and devices, dielectric materials growth and characterization, as well as electronic materials devices optimization. Doolittle has authored or co-authored 118 research papers and has made 101 presentations, of which 34 were invited. He has been recognized with several awards, including the NSF CAREER award in 2004 and the Richard M. Bass/Eta Kappa Nu ECE Outstanding Teacher Award multiple times.

Research Interests

Experience

Professor

2001-01-01 — Present

Georgia Institute of Technology • Atlanta, GA

Joined faculty and contributed to the development of academic programs and research in microelectronics.

Requirements for Georgia Institute of Technology

Doctorate Program
Requirements
GPA Requirement
Required:3.5
TOEFL
Listening
Required:19
Reading
Required:19
Writing
Required:19
Speaking
Required:19
Total
Required:100
IELTS
Listening
Required:6.5
Reading
Required:6.5
Writing
Required:5.5
Speaking
Required:6.5
Overall
Required:7.5
Prerequisites
Undergraduate degree in computer science or related field
Application Checklist
  • Online application
  • Official transcripts
  • Three letters of recommendation
  • Statement of Purpose
Specialization Notes

Department of Computer Science: GRE scores are optional for Fall 2026.