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Yoshio Nishi is a Professor Emeritus in Electrical Engineering at Stanford University, where he focuses on research related to silicon germanium-based CMOS devices and materials processing. His current research interests include innovative device structures, new materials in the context of nanoelectronics, resistive switching memory, and the engineering of metal gate work functions. Additionally, Nishi explores flexible electronics and graphene band engineering, significantly contributing to advancements in these fields. He has held numerous prestigious titles and awards, including Fellow of the IEEE in 1987 and Life Fellow in 2014. He has received the Jack Morton Award in 1995 and the Robert N. Noyce Medal in 2002 from the IEEE, along with a Lifetime Achievement Award from SEMI in 2008, and recognition from the Japan Society of Applied Physics as an International Fellow in 2012. Nishi has also served on various boards and committees, including the Evaluation Committee for the MANA project at NIMS and the Technical Advisory Board of Ultratech Stepper Inc. His educational background includes a PhD from the University of Tokyo, earned in 1973.
The Computer Science department emphasizes research potential. GRE General is currently optional but recommended for some tracks.