Iii V Nitride Materials Professors in Global

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Shyh-chiang Shen
Georgia Institute of Technology United States of America
iii-nitride transistor technologies
high sensitivity iii-nitride-based uv photodetectors
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Mingchu Tang
University College London United Kingdom
iii-v compound semiconductor materials
group-iv materials
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Huili Xing
Cornell University Netherlands
iii-v nitride materials
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Zetian Mi
University of Michigan United States of America
iii-nitride materials
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Paul Dapkus
University of Southern California United States of America
iii-v materials
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David Moran
University of Glasgow United Kingdom
iii-v materials
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Daniel Cassidy
McMaster University Canada
iii-v materials
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Brett Nener
University of Western Australia Australia
iii-nitride device technology
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Abdallah Ougazzaden
Georgia Institute of Technology United States of America
nitride-based semiconductor materials
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Bayram C.
University of Illinois United States of America
cubic iii-nitrides
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Amnon Yariv
California Institute of Technology United States of America
iii-v devices
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Åsa Haglund
Chalmers University of Technology Sweden
iii-nitride-based light emitters
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Nicolas Grandjean
École Polytechnique Fédérale de Lausanne Switzerland
iii-v nitride wide-bandgap semiconductor
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Parvathala Narangari
Australian National University Australia
iii-v semiconductor devices
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John Schermer
Radboud University Netherlands
iii-v semiconductor devices
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Stefania Impellizzeri
Toronto Metropolitan University Canada
nano 3d materials
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Kevin Hemker
Johns Hopkins University United States of America
3d materials
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Babak Anasori
Purdue University United States of America
nitrides
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Johanna Rosén
Linköping University Sweden
3d materials
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Florian Trybel
Linköping University Sweden
nitrides
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Ray Lapierre
McMaster University Canada
iii-v compound semiconductors
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