High Sensitivity Iii Nitride Based Uv Photodetectors Professors in Global

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Shyh-chiang Shen
Georgia Institute of Technology United States of America
high sensitivity iii-nitride-based uv photodetectors
advanced iii-nitride coherent light emitters
iii-nitride transistor technologies
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Åsa Haglund
Chalmers University of Technology Sweden
iii-nitride-based light emitters
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Brett Nener
University of Western Australia Australia
iii-nitride device technology
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Zetian Mi
University of Michigan United States of America
iii-nitride materials
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Rana Adhikari
California Institute of Technology United States of America
high-efficiency photodetection
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Saranya Shriram
Australian National University Australia
iii-v quantum dot infrared photodetectors
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Huili Xing
Cornell University Netherlands
iii-v nitride materials
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Fengling Zhang
Linköping University Sweden
photodetectors
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Jay Guo
University of Michigan United States of America
photodetectors
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Noushin Nasiri
Macquarie University Australia
photodetectors
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Shimul Nath
University of New South Wales Australia
photodetectors
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Ray Lapierre
McMaster University Canada
photodetectors
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Mengxia Liu
Yale University United States of America
photodetectors
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Monika Lendl
University of Geneva Switzerland
high-precision photometry
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Nicolas Cowan
McGill University Canada
high-precision photometry
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Siva Sivoththaman
University of Waterloo Canada
advanced photodetectors
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Sarah Manske
University of Calgary Canada
3d high resolution imaging
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Nicolas Grandjean
École Polytechnique Fédérale de Lausanne Switzerland
iii-v nitride wide-bandgap semiconductor
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Yuning Li
University of Waterloo Canada
photo-detectors
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Purdue University United States of America
optical properties nitride heterostructures
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Paul Kohl
Georgia Institute of Technology United States of America
photosensitive materials
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