Iii Nitride Transistor Technologies Professors in Global

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Brett Nener
University of Western Australia Australia
iii-nitride device technology
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Zetian Mi
University of Michigan United States of America
iii-nitride materials
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Åsa Haglund
Chalmers University of Technology Sweden
iii-nitride-based light emitters
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Abdullah Al-khalidi
University of Glasgow United Kingdom
gallium nitride transistor technologies
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Jan Grahn
Chalmers University of Technology Sweden
transistor technology
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Sanjay Banerjee
University of Texas at Austin United States of America
transistor technology
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Joseph Casamento
Massachusetts Institute of Technology United States of America
nitride semiconductors
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Wei Lu
University of Michigan United States of America
novel transistor devices
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Adam Mckenzie
University of Glasgow United Kingdom
iii-v semiconductors
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Odysseas Kosmatos
Technical University of Denmark Denmark
iii-v semiconductors
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Susanne Mirbt
Uppsala University Sweden
iii-v semiconductors
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Julie Tournet
Australian National University Australia
iii-v semiconductors
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Ksenia Dolgaleva
University of Ottawa Canada
iii-v semiconductors
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John Schermer
Radboud University Netherlands
iii-v semiconductor devices
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Parvathala Narangari
Australian National University Australia
iii-v semiconductor devices
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Nicolas Grandjean
École Polytechnique Fédérale de Lausanne Switzerland
iii-v nitride wide-bandgap semiconductor
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Bayram C.
University of Illinois United States of America
cubic iii-nitrides
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Pouya Valizadeh
Concordia University Canada
iii-v electronics
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Jorge Galán
Yale University United States of America
type iii secretion systems
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Michael Kolbe
University of Hamburg Germany
type iii secretion systems
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Bertrand Boussert
Georgia Institute of Technology United States of America
iii-n structures
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