Iii Nitride Device Technology Professors in Global

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Shyh-chiang Shen
Georgia Institute of Technology United States of America
iii-nitride transistor technologies
high sensitivity iii-nitride-based uv photodetectors
advanced iii-nitride coherent light emitters
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Brett Nener
University of Western Australia Australia
iii-nitride device technology
semiconductor device technology
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Abdallah Ougazzaden
Georgia Institute of Technology United States of America
nitride-based semiconductor materials
iii-v semiconductor device physics
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Zetian Mi
University of Michigan United States of America
iii-nitride materials
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Huili Xing
Cornell University Netherlands
iii-v nitride materials
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Åsa Haglund
Chalmers University of Technology Sweden
iii-nitride-based light emitters
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Yan-fei Liu
Queen's University Canada
gallium nitride devices
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Michael Uren
University of Bristol United Kingdom
gallium nitride devices
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Bayram C.
University of Illinois United States of America
cubic iii-nitrides
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Amnon Yariv
California Institute of Technology United States of America
iii-v devices
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Anusha Venkataraman
University of Victoria Canada
nanomaterials devices
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Joseph Casamento
Massachusetts Institute of Technology United States of America
nitride semiconductors
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John Schermer
Radboud University Netherlands
iii-v semiconductor devices
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Parvathala Narangari
Australian National University Australia
iii-v semiconductor devices
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Thomas Wallin
Massachusetts Institute of Technology United States of America
3d-printed devices
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John Doe
Johns Hopkins University United States of America
medical device technology
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Nicolas Grandjean
École Polytechnique Fédérale de Lausanne Switzerland
iii-v nitride wide-bandgap semiconductor
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Henri Jansen
Technical University of Denmark Denmark
3d nanodevices
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Peter Monteleone
University of Texas at Austin United States of America
novel device development
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Nick Donaldson
University College London United Kingdom
implanted device technology
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Reza Shahmiri
University of New South Wales Australia
medical devices technology
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